品牌 KIKUSUI/日本菊水 應用領域 電子,電氣
KIKUSUI菊水TOS7210S絕緣電阻測試儀
可在 50Vdc-2000Vdc（分(fen)辨率 1V）范圍(wei)內實施設(she)定
可通過面板側的(de)開關即時(shi)切(qie)換(huan)施加電壓極性(xing)
輸出(chu)端子與(yu)接地電(dian)位(wei)間為浮地狀態。只測量通過測量點間的(de)電(dian)流
可對電流測量值(zhi)或電阻測量值(zhi)進行切換顯示
KIKUSUI菊水TOS7210S絕緣電阻測試儀
PID 絕緣測(ce)(ce)試(shi)(shi)儀（TOS7210S）是為準確有(you)效地(di)對(dui)(dui)太陽能(neng)電池模塊的 PID(Potential Induced Degradation) 現象進行(xing)評估， 以(yi)絕緣電阻(zu)測(ce)(ce)試(shi)(shi)儀（TOS7200）為基礎設計而(er)成的測(ce)(ce)試(shi)(shi)儀。附有(you)極性切換功能(neng)，輸出電壓(ya)可達 2000V, 同(tong)時裝載了 nA 級分辨率的電流表，因此不只(zhi)可以(yi)進行(xing) PID 評估，還可以(yi)用于要求進行(xing)高(gao)敏感度測(ce)(ce)試(shi)(shi)的絕緣體評估測(ce)(ce)試(shi)(shi)。標準安(an)裝了可從外(wai)部調用的面板存儲器(qi)及 RS232C 接口，因此也可以(yi)靈(ling)活對(dui)(dui)應自動(dong)化系統。
PID 現象(xiang)(xiang)是指太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)與邊框長期被施以高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)(dian)(dian)壓，電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)量(liang)顯著降低的(de)現象(xiang)(xiang)。目(mu)前(qian)(qian)認為所施加的(de)電(dian)(dian)(dian)(dian)(dian)(dian)壓越高(gao)(gao)(gao)(gao)并(bing)且(qie)越是在高(gao)(gao)(gao)(gao)溫、高(gao)(gao)(gao)(gao)濕的(de) 環境下劣化(hua)現象(xiang)(xiang)越嚴重(zhong)。如晶(jing)體硅(gui)太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)模塊的(de)輸(shu)出電(dian)(dian)(dian)(dian)(dian)(dian)壓即使(shi)只(zhi)有(you)(you)數十 V，一旦直接連(lian)接的(de)片(pian)數增加，串內的(de)電(dian)(dian)(dian)(dian)(dian)(dian)位(wei)差將變(bian)得非常 高(gao)(gao)(gao)(gao)。一方面(mian)，PCS（Power Conditioning System）作為交流(liu)電(dian)(dian)(dian)(dian)(dian)(dian)源與系(xi)統(tong)相(xiang)連(lian) , 使(shi)接地(di)形態發(fa)(fa)生(sheng)變(bian)化(hua)。輸(shu)入端(duan)采用(yong)(yong)浮(fu)接（一側電(dian)(dian)(dian)(dian)(dian)(dian)極不(bu)能(neng)(neng)接地(di) 線）的(de)無變(bian)壓器(qi)方式(shi)近年也(ye)有(you)(you)所增加。這種情況(kuang)下電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)和(he)地(di)線間將發(fa)(fa)生(sheng)高(gao)(gao)(gao)(gao)電(dian)(dian)(dian)(dian)(dian)(dian)位(wei)差。晶(jing)體硅(gui)太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)模塊中(zhong)，相(xiang)對于邊框（接地(di)線）負極電(dian)(dian)(dian)(dian)(dian)(dian)位(wei)高(gao)(gao)(gao)(gao)的(de)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)容(rong)易發(fa)(fa)生(sheng) PID 現象(xiang)(xiang)。（請參照圖(tu) 1） 目(mu)前(qian)(qian)，日(ri)本國內以 Max 600V、歐(ou)洲以 max 1000V 的(de)系(xi)統(tong)電(dian)(dian)(dian)(dian)(dian)(dian)壓運(yun)行太(tai)陽(yang)能(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)模塊，但是目(mu)前(qian)(qian)出現了提高(gao)(gao)(gao)(gao) Max 系(xi)統(tong)電(dian)(dian)(dian)(dian)(dian)(dian)壓以削減企業用(yong)(yong)大規模太(tai)陽(yang)能(neng)(neng)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)的(de)串數、PCS 總(zong)數，提高(gao)(gao)(gao)(gao)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)效率(lv)的(de)趨勢。
圖 2 模(mo)擬了(le)晶體硅太陽(yang)能電(dian)池(chi)模(mo)塊處于高電(dian)位(wei)(wei)差的(de)狀況。 邊框為正極電(dian)位(wei)(wei)、模(mo)塊電(dian)路處于負電(dian)位(wei)(wei)的(de)狀況。晶體硅太陽(yang)能電(dian)池(chi)模(mo)塊的(de)PID現(xian)象(xiang)被認(ren)(ren)為是白(bai)板強化(hua)(hua)玻(bo)璃(li)內的(de)鈉離(li)子向單元側移動，從而引起(qi)劣化(hua)(hua)。（薄(bo)膜類太陽(yang)能電(dian)池(chi)模(mo)塊也被確認(ren)(ren)出現(xian) PID 現(xian)象(xiang)，但是發(fa)生劣化(hua)(hua)的(de)機制與晶體硅太陽(yang)能電(dian)池(chi)模(mo)塊不同。）現(xian)在，各種研究(jiu)機構正在通過研究(jiu)、試驗查(cha)找 PID 現(xian)象(xiang)的(de)原因。
可(ke)將(jiang)對測(ce)試物施加的(de)(de)(de)測(ce)試電(dian)(dian)(dian)(dian)壓設(she)定在(zai)(zai) 50Vdc-2000Vdc（分辨率1V）的(de)(de)(de)范(fan)圍(wei)內。 假設(she)太陽光(guang)發電(dian)(dian)(dian)(dian)系統的(de)(de)(de)電(dian)(dian)(dian)(dian)壓在(zai)(zai)1000V以上，可(ke)對其進行評(ping)估。此外， 在(zai)(zai)電(dian)(dian)(dian)(dian)氣(qi) · 電(dian)(dian)(dian)(dian)子部件、電(dian)(dian)(dian)(dian)氣(qi) · 電(dian)(dian)(dian)(dian)子設(she)備的(de)(de)(de)絕緣電(dian)(dian)(dian)(dian)阻(zu)測(ce)試中， 也(ye)可(ke)對應JIS C 1302: 1994所(suo)規定的(de)(de)(de)電(dian)(dian)(dian)(dian)壓范(fan)圍(wei)以外的(de)(de)(de)測(ce)試。 在(zai)(zai)50V-1000V范(fan)圍(wei)內， 輸出特(te)性(xing)以JIS C 1302: 1994為(wei)基(ji)準。
輸出端子與接地電位間為浮地狀態。*1此外，使用屏蔽電纜作為輸出電纜。 這樣就可以不測量被測試物與大地間的電流， 只測量測試點間的電流， 就可確保評估測試的高敏感度和精確性。
*1：設(she)定為正極的(de)端子的(de)對地電壓（±1000Vdc） 設(she)定為負極的(de)端子的(de)對地電壓（+1000Vdc及-3000Vdc）
可(ke)(ke)通(tong)(tong)過(guo)主機面板的開關輕松切(qie)換輸出(chu)極(ji)(ji)性(xing)。 PID現象是一種可(ke)(ke)逆現象，施(shi)加負偏(pian)壓(ya)電(dian)壓(ya)可(ke)(ke)能會恢復。 極(ji)(ji)性(xing)切(qie)換是一項不需要對被檢品實施(shi)配線變(bian)更的便利功能。 此外，通(tong)(tong)過(guo)RS232C接口可(ke)(ke)實施(shi)由(you)外部控(kong)制的切(qie)換。
在(zai)電(dian)阻(zu)顯示模(mo)式(shi)中，基(ji)于對數壓縮將對應電(dian)阻(zu)測量(liang)(liang)值(zhi)的電(dian)壓輸出限制在(zai)0V-4V之間。 在(zai)電(dian)流顯示模(mo)式(shi)中，對應電(dian)流測量(liang)(liang)值(zhi)及測量(liang)(liang)量(liang)(liang)程（4個量(liang)(liang)程）按線(xian)性標度輸出。 使用數據記(ji)錄(lu)器等外部記(ji)錄(lu)設備可對被測試物的變化(hua)、劣化(hua)狀況進行解析。
|
|||||
|
|||||
 |